Kelin J. Kuhn is an Intel Fellow, Technology and Manufacturing Group and director of Logic Device Technology. Kuhn is the device lead of the pathfinding team. Kelin Kuhn of Oregon State University, Oregon (OSU) with expertise in: Experimental Physics, Atomic, Molecular and Optical Physics and Solid State Physics. Dr. Kuhn received her B.S. in Electrical Engineering from the University of Washington, Seattle, WA (magna cum laude) in and the M.S. and Ph.D. in.
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Only 3 left in stock – order soon. Kuhn uses an analogy to explain the move. Nanowire-based mechanical switching device. Amazon Renewed Refurbished products with a warranty. Withoutabox Submit to Film Festivals. All Formats Paperback Sort by: Leakage reduction structures for nanowire transistors.
Amazon Music Stream millions of songs. Kelin Kuhn has filed for patents to protect the following inventions. Kuhn began flying as a distraction from work but soon realized it was a terrific way to augment her lifelong love of geology and rock collecting.
Kelin J. Kuhn – Engineering and Technology History Wiki
Methods of forming low band gap source and drain structures in microelectronic devices. Nanowire transistor with underlayer etch stops. The embodiments herein reduce an external parasitic resistance of the device. Silicon Valley Watcher — reporting from the disruptive intersection of technology and media. Popularity Popularity Featured Price: Keliin a problem loading this menu right now.
Stephen M Cea, Martin D. In at least one embodiment, the present disclosure relates to forming isolation structures in strained semiconductor bodies of non-planar transistors while maintaining strain in the semiconductor bodies.
Why leave a coveted job with the freedom to work on anything she wanted? The source region or the drain region, or combinations thereof, comprises a first side surface, a second side surface, and khhn top surface. The underlayer etch stop may prevent damage to the source structures andor drain the structures, when the material used in the fabrication of the source structures andor the drain structures is susceptible to being etched by the processes used in the removal of the sacrificial materials, i.
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Kelin Kuhn Inventions, Patents and Patent Applications – Justia Patents Search
Are you an author? High to Low Avg. The use of at least one hardmask may result in a substantially damage free uppermost channel nanowire in a multi-stacked nanowire transistor, which may improve the uniformity of the channel nanowires and the reliability of the overall multi-stacked nanowire transistor.
ComiXology Thousands of Digital Comics. Previously, Kuhn was a tenured faculty member in the Department of Electrical and Computer Engineering at the University of Washington.
A semiconductor device comprises a keli and a semiconductor body formed on the substrate. East Dane Designer Men’s Fashion. Amazon Rapids Fun stories for kids on the go. Amazon Restaurants Food delivery from local restaurants.
Get fast, free shipping with Amazon Prime. She has five patents with five others pending and is the author of more than 60 technical papers and a textbook. Nanowire transistor fabrication with hardmask layers.
Kuhn joined Intel in as a front-end integration engineer working on Intel’s 0. Kuhn is the device lead of the pathfinding team responsible for the transistor architecture for Intel’s 22 nanometer nm process technology.
Learn more at Author Central. She has been involved in Intel’s manufacturing process technology development for several generations of process technology including Intel’s 45nm process kugn. Amazon Inspire Digital Educational Resources.